2SD1899-Z-E1 TO-252 3A 60V 10W NPN TRANSISTOR
2SD1899-Z
Type Designator: 2SD1899-Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO251
Ürün Bilgisi
2SD1899-Z
Type Designator: 2SD1899-Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO251