2SJ601-Z-E1-AZ - (J601) TO-252 36A 60V 65W 31MOHM P-CHANNEL MOSFET
2SJ601-Z
Type Designator: 2SJ601-Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 65 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 36 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 580 pF
Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm
Package: TO252
Ürün Bilgisi
2SJ601-Z
Type Designator: 2SJ601-Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 65 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 36 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 580 pF
Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm
Package: TO252