2SK1082 TO-3PN 900V 6A N-CHANNEL MOSFET Transistör
2SK1082
Type Designator: 2SK1082-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 110 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
Package: TO3P
Ürün Bilgisi
2SK1082
Type Designator: 2SK1082-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 110 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
Package: TO3P