2SK1112 TO-251 60V 5A 20W N-CHANNEL MOSFET TRANSISTOR
2SK1112
Type Designator: 2SK1112
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 280 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: TO251
Ürün Bilgisi
2SK1112
Type Designator: 2SK1112
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 280 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: TO251