2SK1162 TO-3P 500V 10A 100W N-CHANNEL MOSFET TRANSISTOR
2SK1162
Type Designator: 2SK1162
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 280 pF
Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm
Package: TO3P
Ürün Bilgisi
2SK1162
Type Designator: 2SK1162
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 280 pF
Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm
Package: TO3P