2SK1169 TO-3P 450V 20A 120W N-CHANNEL MOSFET TRANSISTOR
2SK1169
Type Designator: 2SK1169
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 450 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 115 nS
Drain-Source Capacitance (Cd): 780 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: TO3P
Ürün Bilgisi
2SK1169
Type Designator: 2SK1169
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 450 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 115 nS
Drain-Source Capacitance (Cd): 780 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: TO3P