2SK2018 TO-252 60V 10A 20W N-CHANNEL MOSFET TRANSISTOR
2SK2018
Type Designator: 2SK2018-01L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
Package: K-PACK-L
Ürün Bilgisi
2SK2018
Type Designator: 2SK2018-01L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
Package: K-PACK-L