2SK2082 TO-3P 9A 900V 150W 1.4OHM N-CHANNEL MOSFET
2SK2082
Type Designator: 2SK2082-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO3P
Ürün Bilgisi
2SK2082
Type Designator: 2SK2082-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO3P