AOK20B60D1 TO-247 600V 40A IGBT Transistör
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 139 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7(typ) V
tr ⓘ - Rise Time, typ: 37 nS
Coesⓘ - Output Capacitance, typ: 93 pF
Qg ⓘ - Total Gate Charge, typ: 24.6 nC
Ürün Bilgisi
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 139 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7(typ) V
tr ⓘ - Rise Time, typ: 37 nS
Coesⓘ - Output Capacitance, typ: 93 pF
Qg ⓘ - Total Gate Charge, typ: 24.6 nC