AP4435GH TO-252 40A 30V 44.6W 0.02Ω P-CHANNEL MOSFET
AP4435GH MOSFET
Type Designator: AP4435GH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 44.6 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 64 nS
Drain-Source Capacitance (Cd): 195 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO252
Ürün Bilgisi
AP4435GH MOSFET
Type Designator: AP4435GH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 44.6 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 64 nS
Drain-Source Capacitance (Cd): 195 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO252