AP4800AGM - (4800M) SOIC-8 9.6A 30V 2.5W 18MΩ N-CHANNEL MOSFET
AP4800AGM MOSFET
Type Designator: AP4800AGM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 9.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 155 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: SO8
Ürün Bilgisi
AP4800AGM MOSFET
Type Designator: AP4800AGM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 9.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 155 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: SO8