BSC032N03SG - (32N03S) TDSON-8 23A 30V 2.8W 3.2mΩ N-CHANNEL MOSFET
BSC032N03SG MOSFET
Type Designator: BSC032N03SG
Marking Code: 32N03S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.8 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 23 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 29 nC
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 1360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm
Package: TDSON8
Ürün Bilgisi
BSC032N03SG MOSFET
Type Designator: BSC032N03SG
Marking Code: 32N03S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.8 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 23 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 29 nC
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 1360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm
Package: TDSON8