BSC079N03SG - (79N03S) TDSON-8 14.6A 30V 2.8W 7.9mΩ N-CHANNEL MOSFET
BSC079N03SG MOSFET
Type Designator: BSC079N03SG
Marking Code: 79N03S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.8 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 14.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 4.2 nS
Drain-Source Capacitance (Cd): 600 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0079 Ohm
Package: PG-TDSON-8
Ürün Bilgisi
BSC079N03SG MOSFET
Type Designator: BSC079N03SG
Marking Code: 79N03S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.8 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 14.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 4.2 nS
Drain-Source Capacitance (Cd): 600 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0079 Ohm
Package: PG-TDSON-8