BSP170P SOT-223 1.9A 60V MOSFET
BSP170P MOSFET. Datasheet pdf. Equivalent
Type Designator: BSP170P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.8 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 1.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 10 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
Package: SOT223
Ürün Bilgisi
BSP170P MOSFET. Datasheet pdf. Equivalent
Type Designator: BSP170P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.8 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 1.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 10 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
Package: SOT223