BSP315P SOT-223 1.17A 60V 1.8W 0.8OHM P-CHANNEL MOSFET
BSP315P
Type Designator: BSP315P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.8 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 1.17 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 5.2 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 40 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: SOT223
Ürün Bilgisi
BSP315P
Type Designator: BSP315P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.8 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 1.17 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 5.2 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 40 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: SOT223