BT151-650R TO-220 650V 12A 15mA SCR THYRISTOR
BT151-650R
Type: SCR
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 650 V
Maximum average on-state current (IT(AVR)): 8 A
Maximum RMS on-state current (IT(RMS)): 12 A
Non repetitive surge peak on-state current (ITSM): 100 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 1.3 K/W
Triggering gate voltage (VGT): 0.6 V
Peak on-state voltage drop (VTM): 1.75 V
Triggering gate current (IGT): 2 mA
Holding current (IH): 7 mA
Package: TO‑220
Ürün Bilgisi
BT151-650R
Type: SCR
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 650 V
Maximum average on-state current (IT(AVR)): 8 A
Maximum RMS on-state current (IT(RMS)): 12 A
Non repetitive surge peak on-state current (ITSM): 100 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 1.3 K/W
Triggering gate voltage (VGT): 0.6 V
Peak on-state voltage drop (VTM): 1.75 V
Triggering gate current (IGT): 2 mA
Holding current (IH): 7 mA
Package: TO‑220