IXGM25N100A TO-3 25A 1000V 200W IGBT TRANSISTOR
IXGM25N100A IGBT
Type Designator: IXGM25N100A
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 200
Maximum Collector-Emitter Voltage |Vce|, V: 1000
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 50
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 4(max)
Maximum G-E Threshold Voltag |VGE(th)|, V: 5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 200
Collector Capacity (Cc), typ, pF: 200
Total Gate Charge (Qg), typ, nC: 130
Package: TO204
Ürün Bilgisi
IXGM25N100A IGBT
Type Designator: IXGM25N100A
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 200
Maximum Collector-Emitter Voltage |Vce|, V: 1000
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 50
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 4(max)
Maximum G-E Threshold Voltag |VGE(th)|, V: 5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 200
Collector Capacity (Cc), typ, pF: 200
Total Gate Charge (Qg), typ, nC: 130
Package: TO204