BUZ100 TO-220 60A 50V 250W N-CHANNEL MOSFET
BUZ100 MOSFET
Type Designator: BUZ100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 60 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 800 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: TO-220AB
Ürün Bilgisi
BUZ100 MOSFET
Type Designator: BUZ100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 60 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 800 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: TO-220AB