BUZ334 TO-218 12A 600V N-CHANNEL SIPMOS POWER TRANSISTOR
BUZ334 MOSFET
Type Designator: BUZ334
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm
Package: TO-218AA
Ürün Bilgisi
BUZ334 MOSFET
Type Designator: BUZ334
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 180 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm
Package: TO-218AA