BUZ384 TO-218 10.5A 500V N-CHANNEL SIPMOS POWER TRANSISTOR
BUZ384 MOSFET
Type Designator: BUZ384
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 80 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO218AA
Ürün Bilgisi
BUZ384 MOSFET
Type Designator: BUZ384
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 80 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO218AA