BUZ51 TO-220 3.4A 1000V 125W N-CHANNEL SIPMOS POWER TRANSISTOR
BUZ51 MOSFET
Type Designator: BUZ51
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 4 Ohm
Package: TO-220AB
Ürün Bilgisi
BUZ51 MOSFET
Type Designator: BUZ51
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 4 Ohm
Package: TO-220AB