CS20N65A8H TO-220 20A 650V 120W 0.4Ω N-CHANNEL POWER MOSFET
CS20N65P MOSFET
Type Designator: CS20N65P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 80 nC
Rise Time (tr): 48.4 nS
Drain-Source Capacitance (Cd): 249.5 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: TO-220
Ürün Bilgisi
CS20N65P MOSFET
Type Designator: CS20N65P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 80 nC
Rise Time (tr): 48.4 nS
Drain-Source Capacitance (Cd): 249.5 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: TO-220