FCP9N60N TO-220 9A 600V 83.3W 0.385Ω N-CHANNEL MOSFET
FCP9N60N MOSFET
Type Designator: FCP9N60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83.3 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22 nC
Maximum Drain-Source On-State Resistance (Rds): 0.385 Ohm
Package: TO220
Ürün Bilgisi
FCP9N60N MOSFET
Type Designator: FCP9N60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83.3 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 22 nC
Maximum Drain-Source On-State Resistance (Rds): 0.385 Ohm
Package: TO220