FDC642P - (6243) SSOT-6 4A 20V P-CHANNEL MOSFET
FDC642P
Type Designator: FDC642P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.6 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11 nC
Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm
Package: SSOT
Ürün Bilgisi
FDC642P
Type Designator: FDC642P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.6 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11 nC
Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm
Package: SSOT