FDD5680 TO-252 38A 60V 60W 0.021OHM N-CHANNEL MOSFET
FDD5680 MOSFET
Type Designator: FDD5680
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 38 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 33 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm
Package: TO-252
Ürün Bilgisi
FDD5680 MOSFET
Type Designator: FDD5680
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 38 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 33 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm
Package: TO-252