FDD6296 TO-252 50A 30V 52W 8.8MΩ N-CHANNEL MOSFET
FDD6296 MOSFET
Type Designator: FDD6296
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 52 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 22.5 nC
Rise Time (tr): 6 nS
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0088 Ohm
Package: TO252
Ürün Bilgisi
FDD6296 MOSFET
Type Designator: FDD6296
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 52 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 22.5 nC
Rise Time (tr): 6 nS
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0088 Ohm
Package: TO252