FDD8444L TO-252 50A 40V 153W 5.2MΩ N-CHANNEL MOSFET
FDD8444L MOSFET
Type Designator: FDD8444L-F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 153 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 46 nC
Rise Time (tr): 46 nS
Drain-Source Capacitance (Cd): 605 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0052 Ohm
Package: TO252
Ürün Bilgisi
FDD8444L MOSFET
Type Designator: FDD8444L-F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 153 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 46 nC
Rise Time (tr): 46 nS
Drain-Source Capacitance (Cd): 605 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0052 Ohm
Package: TO252