FDP51N25 TO-220 51A 250V 60mΩ N-CHANNEL POWER MOSFET
FDP51N25
Type Designator: FDP51N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 320 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 51 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 55 nC
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: TO220
Ürün Bilgisi
FDP51N25
Type Designator: FDP51N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 320 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 51 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 55 nC
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: TO220