FDP61N20 TO-220 61A 200V 417W 0.041Ω N-CHANNEL MOSFET
FDP61N20 MOSFET
Type Designator: FDP61N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 417 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 61 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 58 nC
Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm
Package: TO220
Ürün Bilgisi
FDP61N20 MOSFET
Type Designator: FDP61N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 417 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 61 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 58 nC
Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm
Package: TO220