FDP80N06 TO-220 80A 60V 176W 10mΩ N-CHANNEL MOSFET
FDP80N06 MOSFET
Type Designator: FDP80N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 176 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 57 nC
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO220
Ürün Bilgisi
FDP80N06 MOSFET
Type Designator: FDP80N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 176 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 57 nC
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO220