FDS4953 SOIC-8 50A 30V P-CHANNEL MOSFET
FDS4953
Type Designator: FDS4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.6 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 6 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 132 pF
Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
Package: SO8
Ürün Bilgisi
FDS4953
Type Designator: FDS4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.6 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 6 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 132 pF
Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
Package: SO8