FDS6675BZ SO-8 11A 30V P-CHANNEL MOSFET TRANSISTOR
FDS6675BZ
Type Designator: FDS6675BZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 44 nC
Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm
Package: SOIC
Ürün Bilgisi
FDS6675BZ
Type Designator: FDS6675BZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 44 nC
Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm
Package: SOIC