FDS6898A SOIC-8 9.4A 20V 2W 0.014OHM DUAL N-CHANNEL MOSFET
FDS6898A MOSFET
Type Designator: FDS6898A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 9.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 440 pF
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: SO-8
Ürün Bilgisi
FDS6898A MOSFET
Type Designator: FDS6898A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 9.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 440 pF
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: SO-8