FMH23N50E TO-3P 23A 500V 315W 0.245OHM N-CHANNEL MOSFET
FMH23N50E
Type Designator: FMH23N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 315 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 23 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 93 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.245 Ohm
Package: TO3P
Ürün Bilgisi
FMH23N50E
Type Designator: FMH23N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 315 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 23 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 93 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.245 Ohm
Package: TO3P