FQA11N90C TO-3P 11A 900V 300W 1.1Ω N-CHANNEL MOSFET TRANSISTOR
FQA11N90C
Type Designator: FQA11N90C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 130 nS
Drain-Source Capacitance (Cd): 215 pF
Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm
Package: TO-3P
Ürün Bilgisi
FQA11N90C
Type Designator: FQA11N90C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 130 nS
Drain-Source Capacitance (Cd): 215 pF
Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm
Package: TO-3P