FQA55N10 TO-3P 61A 100V 190W 0.026Ω N-CHANNEL MOSFET
FQA55N10 MOSFET
Type Designator: FQA55N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 61 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 250 nS
Drain-Source Capacitance (Cd): 640 pF
Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
Package: TO-3P
Ürün Bilgisi
FQA55N10 MOSFET
Type Designator: FQA55N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 61 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 250 nS
Drain-Source Capacitance (Cd): 640 pF
Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
Package: TO-3P