FQA9N90C TO-3P 9A 900V 280W 1.4Ω N-CHANNEL MOSFET
FQA9N90C MOSFET
Type Designator: FQA9N90C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 45 nC
Rise Time (tr): 120 nS
Drain-Source Capacitance (Cd): 175 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO-3P
Ürün Bilgisi
FQA9N90C MOSFET
Type Designator: FQA9N90C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 45 nC
Rise Time (tr): 120 nS
Drain-Source Capacitance (Cd): 175 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO-3P