FQB6N70 TO-263 6.2A 700V 142W 1.5Ω N-CHANNEL MOSFET
FQB6N70TM MOSFET
Type Designator: FQB6N70TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 142 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 125 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: D2-PAK
Ürün Bilgisi
FQB6N70TM MOSFET
Type Designator: FQB6N70TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 142 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 125 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: D2-PAK