FQD30N06 TO-252 60V 22.7A N-CHANNEL MOSFET TRANSISTOR
FQD30N06
Type Designator: FQD30N06TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 44 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 22.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 85 nS
Drain-Source Capacitance (Cd): 270 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: D-PAK
Ürün Bilgisi
FQD30N06
Type Designator: FQD30N06TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 44 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 22.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 85 nS
Drain-Source Capacitance (Cd): 270 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: D-PAK