FQL40N50 TO-264 40A 500V 460W 110mΩ NPT IGBT TRANSISTOR
FQL40N50 MOSFET
Type Designator: FQL40N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 460 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 155 nC
Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
Package: TO264
Ürün Bilgisi
FQL40N50 MOSFET
Type Designator: FQL40N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 460 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 155 nC
Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
Package: TO264