FQP10N50 TO-220 10A 500V 143W 0.61Ω N-CHANNEL MOSFET
FQP10N50CF MOSFET
Type Designator: FQP10N50CF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 143 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 43 nC
Rise Time (tr): 80 nS
Drain-Source Capacitance (Cd): 177 pF
Maximum Drain-Source On-State Resistance (Rds): 0.61 Ohm
Package: TO220
Ürün Bilgisi
FQP10N50CF MOSFET
Type Designator: FQP10N50CF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 143 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 43 nC
Rise Time (tr): 80 nS
Drain-Source Capacitance (Cd): 177 pF
Maximum Drain-Source On-State Resistance (Rds): 0.61 Ohm
Package: TO220