FQP10N60C TO-220 9.5A 600V 156W 0.73Ω N-CHANNEL MOSFET
FQP10N60C MOSFET
Type Designator: FQP10N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 156 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 44 nC
Maximum Drain-Source On-State Resistance (Rds): 0.73 Ohm
Package: TO220
Ürün Bilgisi
FQP10N60C MOSFET
Type Designator: FQP10N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 156 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 44 nC
Maximum Drain-Source On-State Resistance (Rds): 0.73 Ohm
Package: TO220