FQP10N65C TO-220 10A 650V 178W 0.72Ω N-CHANNEL MOSFET
FQP10N65C TO-220 10A 650V 178W 0.72Ω N-CHANNEL MOSFET
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 44 nC
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 166 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
Package: TO-220
Ürün Bilgisi
FQP10N65C TO-220 10A 650V 178W 0.72Ω N-CHANNEL MOSFET
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 44 nC
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 166 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
Package: TO-220