FQP12P20 TO-220 11.5A 200V 120W 0.47Ω P-CHANNEL MOSFET
FQP12P20 MOSFET
Type Designator: FQP12P20
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 11.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 31 nC
Maximum Drain-Source On-State Resistance (Rds): 0.47 Ohm
Package: TO220
Ürün Bilgisi
FQP12P20 MOSFET
Type Designator: FQP12P20
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 11.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 31 nC
Maximum Drain-Source On-State Resistance (Rds): 0.47 Ohm
Package: TO220