FQP13N50C TO-220 12.5A 500V 0.48OHM 170W N-CHANNEL MOSFET
FQP13N50C
Type Designator: FQP13N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 195 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 56 nC
Maximum Drain-Source On-State Resistance (Rds): 0.48 Ohm
Package: TO220
Ürün Bilgisi
FQP13N50C
Type Designator: FQP13N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 195 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 56 nC
Maximum Drain-Source On-State Resistance (Rds): 0.48 Ohm
Package: TO220