FQP27P06 TO-220 27A 60V P-CHANNEL MOSFET
FQP27P06 MOSFET
Type Designator: FQP27P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 27 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 33 nC
Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
Package: TO220
Ürün Bilgisi
FQP27P06 MOSFET
Type Designator: FQP27P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 27 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 33 nC
Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
Package: TO220