FQP32N20C TO-220 28A 200V N-CHANNEL MOSFET TRANSISTOR
FQP32N20C
Type Designator: FQP32N20C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 156 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 28 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 82.5 nC
Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm
Package: TO220
Ürün Bilgisi
FQP32N20C
Type Designator: FQP32N20C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 156 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 28 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 82.5 nC
Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm
Package: TO220