FQP3N80C TO-220 3A 800V 107W 4.8Ω N-CHANNEL MOSFET
FQP3N80 MOSFET
Type Designator: FQP3N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 107 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 57 pF
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
Package: TO-220
Ürün Bilgisi
FQP3N80 MOSFET
Type Designator: FQP3N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 107 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 57 pF
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
Package: TO-220