FQP4N80 TO-220 3.9A 800V 130W 3.6Ω N-CHANNEL MOSFET
FQP4N80 MOSFET
Type Designator: FQP4N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 130 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Maximum Drain-Source On-State Resistance (Rds): 3.6 Ohm
Package: TO220
Ürün Bilgisi
FQP4N80 MOSFET
Type Designator: FQP4N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 130 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Maximum Drain-Source On-State Resistance (Rds): 3.6 Ohm
Package: TO220