FQP6N80C TO-220 5.5A 800V 158W 2.5Ω N-CHANNEL MOSFET
FQP6N80C
Type Designator: FQP6N80C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 158 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 21 nC
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO220
Ürün Bilgisi
FQP6N80C
Type Designator: FQP6N80C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 158 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 21 nC
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO220